Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Dresden, Technische Universität Dresden, Dissertation, 2022
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Aluminiumnitrid
Galliumnitrid
HEMT
Heterostruktur-Bauelement
Silicium
Großsignalverhalten
Leistungsverstärker
- Ereignis
-
Veröffentlichung
- (wo)
-
Dresden
- (wer)
-
Technische Universität Dresden
- (wann)
-
2022
- Urheber
- Beteiligte Personen und Organisationen
- URN
-
urn:nbn:de:bsz:14-qucosa2-812763
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:57 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Calzolaro, Anthony
- Mikolajick, Thomas
- Dadgar, Armin
- Technische Universität Dresden
Entstanden
- 2022
Ähnliche Objekte (12)
Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Metal-insulator-semiconductor structures and AlGaN/GaN hetero-junctions based on cubic group-III nitrides
Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications
Fabrication and characterization of AIGaN/GaN high electron mobility transistors
Untersuchung von "high-k"-Materialien als alternative Dielektrika für AlGaN-GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN-GaN-based metal insulator semiconductor heterostructure field effect transistors (MISHFET)
Untersuchung von"high-k" Materialien als alternative Dielektrika für AlGaN/GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET)
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors
Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers
High-Q AlGaN/GaN varactors for mobile communication systems
AlGaN,GaN-based millimeter-wave high electron mobility transistors
Fabrication and characterization of integrable GaAs-based high-contrast grating reflector and Fabry-Pérot filter array with GaInP sacrificial layer
Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Metal-insulator-semiconductor structures and AlGaN/GaN hetero-junctions based on cubic group-III nitrides
Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications
Fabrication and characterization of AIGaN/GaN high electron mobility transistors
Untersuchung von "high-k"-Materialien als alternative Dielektrika für AlGaN-GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN-GaN-based metal insulator semiconductor heterostructure field effect transistors (MISHFET)
Untersuchung von"high-k" Materialien als alternative Dielektrika für AlGaN/GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET)
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors
Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers
High-Q AlGaN/GaN varactors for mobile communication systems
AlGaN,GaN-based millimeter-wave high electron mobility transistors
Fabrication and characterization of integrable GaAs-based high-contrast grating reflector and Fabry-Pérot filter array with GaInP sacrificial layer
Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Metal-insulator-semiconductor structures and AlGaN/GaN hetero-junctions based on cubic group-III nitrides
Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications
Fabrication and characterization of AIGaN/GaN high electron mobility transistors
Untersuchung von "high-k"-Materialien als alternative Dielektrika für AlGaN-GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN-GaN-based metal insulator semiconductor heterostructure field effect transistors (MISHFET)
Untersuchung von"high-k" Materialien als alternative Dielektrika für AlGaN/GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET)
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors
Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers
High-Q AlGaN/GaN varactors for mobile communication systems
AlGaN,GaN-based millimeter-wave high electron mobility transistors