Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Dresden, Technische Universität Dresden, Dissertation, 2022
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
Aluminiumnitrid
Galliumnitrid
HEMT
Heterostruktur-Bauelement
Silicium
Großsignalverhalten
Leistungsverstärker
- Event
-
Veröffentlichung
- (where)
-
Dresden
- (who)
-
Technische Universität Dresden
- (when)
-
2022
- Creator
- Contributor
- URN
-
urn:nbn:de:bsz:14-qucosa2-812763
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:57 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Calzolaro, Anthony
- Mikolajick, Thomas
- Dadgar, Armin
- Technische Universität Dresden
Time of origin
- 2022
Other Objects (12)
Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Metal-insulator-semiconductor structures and AlGaN/GaN hetero-junctions based on cubic group-III nitrides
Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications
Fabrication and characterization of AIGaN/GaN high electron mobility transistors
Untersuchung von "high-k"-Materialien als alternative Dielektrika für AlGaN-GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN-GaN-based metal insulator semiconductor heterostructure field effect transistors (MISHFET)
Untersuchung von"high-k" Materialien als alternative Dielektrika für AlGaN/GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET)
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors
Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers
High-Q AlGaN/GaN varactors for mobile communication systems
AlGaN,GaN-based millimeter-wave high electron mobility transistors
Fabrication and characterization of integrable GaAs-based high-contrast grating reflector and Fabry-Pérot filter array with GaInP sacrificial layer
Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Metal-insulator-semiconductor structures and AlGaN/GaN hetero-junctions based on cubic group-III nitrides
Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications
Fabrication and characterization of AIGaN/GaN high electron mobility transistors
Untersuchung von "high-k"-Materialien als alternative Dielektrika für AlGaN-GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN-GaN-based metal insulator semiconductor heterostructure field effect transistors (MISHFET)
Untersuchung von"high-k" Materialien als alternative Dielektrika für AlGaN/GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET)
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors
Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers
High-Q AlGaN/GaN varactors for mobile communication systems
AlGaN,GaN-based millimeter-wave high electron mobility transistors
Fabrication and characterization of integrable GaAs-based high-contrast grating reflector and Fabry-Pérot filter array with GaInP sacrificial layer
Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Metal-insulator-semiconductor structures and AlGaN/GaN hetero-junctions based on cubic group-III nitrides
Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications
Fabrication and characterization of AIGaN/GaN high electron mobility transistors
Untersuchung von "high-k"-Materialien als alternative Dielektrika für AlGaN-GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN-GaN-based metal insulator semiconductor heterostructure field effect transistors (MISHFET)
Untersuchung von"high-k" Materialien als alternative Dielektrika für AlGaN/GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET)
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors
Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers
High-Q AlGaN/GaN varactors for mobile communication systems
AlGaN,GaN-based millimeter-wave high electron mobility transistors