Efficient Metal-Halide Perovskite Micro Disc Lasers Integrated in a Silicon Nitride Photonic Platform
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
In: 10.1109/DRC.2018.8442221
- Ereignis
-
Veröffentlichung
- (wo)
-
Aachen
- (wer)
-
Universitätsbibliothek der RWTH Aachen
- (wann)
-
2018
- Urheber
-
Cegielski, P. J.
Neutzner, S.
Porschatis, C.
Gandini, M.
Schall, D.
Perini, C. A. R.
Bolten, J.
Suckow, S.
Chmielak, B.
Petrozza, A.
Wahlbrink, T.
Lemme, Max Christian
Giesecke, A. L.
- DOI
-
10.18154/RWTH-2018-228606
- URN
-
urn:nbn:de:101:1-2022072803260983933598
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:53 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Cegielski, P. J.
- Neutzner, S.
- Porschatis, C.
- Gandini, M.
- Schall, D.
- Perini, C. A. R.
- Bolten, J.
- Suckow, S.
- Chmielak, B.
- Petrozza, A.
- Wahlbrink, T.
- Lemme, Max Christian
- Giesecke, A. L.
- Universitätsbibliothek der RWTH Aachen
Entstanden
- 2018
Ähnliche Objekte (12)
Normally-off transistor topologies in gallium nitride technology
Efficient Optoelectronics with 2D Materials
Editorial
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Photophysics of Lead-Halide Perovskite
Reducing the Metal–Graphene Contact Resistance through Laser-Induced Defects
Graphene / a-Si:H multispectral photodetectors
Integrated silicon photonics transceiver with mode-locked laser and resonant devices
Synthesis and resistive switching mechanisms of mott insulators based on undoped and Cr-doped vanadium oxide thin films : as function of nanostructure and material properties
Entwicklung von Gasphasendepositionsprozessen zur Herstellung von Übergangsmetalldichalkogenid-Monolagen und Heterostrukturen für optoelektronische Bauelemente
Flexible two‑dimensional/three‑dimensional material based photodetectors
Normally-off transistor topologies in gallium nitride technology
Efficient Optoelectronics with 2D Materials
Editorial
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Photophysics of Lead-Halide Perovskite
Reducing the Metal–Graphene Contact Resistance through Laser-Induced Defects
Graphene / a-Si:H multispectral photodetectors
Integrated silicon photonics transceiver with mode-locked laser and resonant devices
Synthesis and resistive switching mechanisms of mott insulators based on undoped and Cr-doped vanadium oxide thin films : as function of nanostructure and material properties
Entwicklung von Gasphasendepositionsprozessen zur Herstellung von Übergangsmetalldichalkogenid-Monolagen und Heterostrukturen für optoelektronische Bauelemente
Flexible two‑dimensional/three‑dimensional material based photodetectors
Normally-off transistor topologies in gallium nitride technology
Efficient Optoelectronics with 2D Materials
Editorial
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Photophysics of Lead-Halide Perovskite
Reducing the Metal–Graphene Contact Resistance through Laser-Induced Defects
Graphene / a-Si:H multispectral photodetectors
Integrated silicon photonics transceiver with mode-locked laser and resonant devices
Synthesis and resistive switching mechanisms of mott insulators based on undoped and Cr-doped vanadium oxide thin films : as function of nanostructure and material properties
Entwicklung von Gasphasendepositionsprozessen zur Herstellung von Übergangsmetalldichalkogenid-Monolagen und Heterostrukturen für optoelektronische Bauelemente