Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks ; volume:10 ; number:1 ; day:19 ; month:3 ; year:2015 ; pages:1-8 ; date:12.2015
Nanoscale research letters ; 10, Heft 1 (19.3.2015), 1-8, 12.2015

Creator
Xiang, Yuren
Zhou, Chunlan
Jia, Endong
Wang, Wenjing
Contributor
SpringerLink (Online service)

DOI
10.1186/s11671-015-0798-2
URN
urn:nbn:de:101:1-2021081920321926018340
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 11:01 AM CEST

Data provider

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Associated

  • Xiang, Yuren
  • Zhou, Chunlan
  • Jia, Endong
  • Wang, Wenjing
  • SpringerLink (Online service)

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