Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks ; volume:10 ; number:1 ; day:19 ; month:3 ; year:2015 ; pages:1-8 ; date:12.2015
Nanoscale research letters ; 10, Heft 1 (19.3.2015), 1-8, 12.2015
- Urheber
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Xiang, Yuren
Zhou, Chunlan
Jia, Endong
Wang, Wenjing
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1186/s11671-015-0798-2
- URN
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urn:nbn:de:101:1-2021081920321926018340
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 11:01 MESZ
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Beteiligte
- Xiang, Yuren
- Zhou, Chunlan
- Jia, Endong
- Wang, Wenjing
- SpringerLink (Online service)
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