Reliability Improvement from La 2 O 3 Interfaces in Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Reliability Improvement from La 2 O 3 Interfaces in Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors ; day:05 ; month:02 ; year:2023 ; extent:10
Advanced materials interfaces ; (05.02.2023) (gesamt 10)

Creator: Mehmood, Furqan
Alcala, Ruben
Vishnumurthy, Pramoda
Xu, Bohan
Sachdeva, Ridham
Mikolajick, Thomas
Schroeder, Uwe

DOI: 10.1002/admi.202202151

URN: urn:nbn:de:101:1-2023020614024125602935

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:45 AM CEST

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Mehmood, Furqan
Alcala, Ruben
Vishnumurthy, Pramoda
Xu, Bohan
Sachdeva, Ridham
Mikolajick, Thomas
Schroeder, Uwe

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Reliability Improvement from La 2 O 3 Interfaces in Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors

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Other Objects (12)

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