Reliability Improvement from La 2 O 3 Interfaces in Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Reliability Improvement from La 2 O 3 Interfaces in Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors ; day:05 ; month:02 ; year:2023 ; extent:10
Advanced materials interfaces ; (05.02.2023) (gesamt 10)
- Urheber
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Mehmood, Furqan
Alcala, Ruben
Vishnumurthy, Pramoda
Xu, Bohan
Sachdeva, Ridham
Mikolajick, Thomas
Schroeder, Uwe
- DOI
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10.1002/admi.202202151
- URN
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urn:nbn:de:101:1-2023020614024125602935
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:45 MESZ
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Beteiligte
- Mehmood, Furqan
- Alcala, Ruben
- Vishnumurthy, Pramoda
- Xu, Bohan
- Sachdeva, Ridham
- Mikolajick, Thomas
- Schroeder, Uwe
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