- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide ; volume:15 ; number:1 ; day:9 ; month:5 ; year:2024 ; pages:1-8 ; date:12.2024
Nature Communications ; 15, Heft 1 (9.5.2024), 1-8, 12.2024
- Creator
-
Taki, Kazuma
Sekine, Naoki
Watanabe, Kouhei
Miyatake, Yuto
Akazawa, Tomohiro
Sakumoto, Hiroya
Toprasertpong, Kasidit
Takagi, Shinichi
Takenaka, Mitsuru
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41467-024-47893-2
- URN
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urn:nbn:de:101:1-2407092122568.673310906700
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:54 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Taki, Kazuma
- Sekine, Naoki
- Watanabe, Kouhei
- Miyatake, Yuto
- Akazawa, Tomohiro
- Sakumoto, Hiroya
- Toprasertpong, Kasidit
- Takagi, Shinichi
- Takenaka, Mitsuru
- SpringerLink (Online service)
Other Objects (12)
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories
Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films
Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition
Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories
Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films
Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition
Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories
Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films
Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition
Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium