Publisher Correction: Stateful characterization of resistive switching TiO2 with electron beam induced currents
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2041-1723
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Publisher Correction: Stateful characterization of resistive switching TiO2 with electron beam induced currents ; volume:9 ; number:1 ; day:24 ; month:1 ; year:2018 ; pages:1 ; date:12.2018
Nature Communications ; 9, Heft 1 (24.1.2018), 1, 12.2018
- Classification
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Naturwissenschaften
- Creator
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Hoskins, Brian D.
- Contributor
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Adam, Gina C.
Strelcov, Evgheni
Zhitenev, Nikolai
Kolmakov, Andrei
Strukov, Dmitri B.
McClelland, Jabez J.
SpringerLink (Online service)
- DOI
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10.1038/s41467-018-02844-6
- URN
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urn:nbn:de:1111-201804137732
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:59 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Hoskins, Brian D.
- Adam, Gina C.
- Strelcov, Evgheni
- Zhitenev, Nikolai
- Kolmakov, Andrei
- Strukov, Dmitri B.
- McClelland, Jabez J.
- SpringerLink (Online service)
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Integration and characterization of atomic layer deposited TiO2 thin films for resistive switching applications
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Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour
Resistive switching in TiO2 thin films
Resistive switching of chemically synthesized TiO2 nanoparticles
Stateful characterization of resistive switching TiO2 with electron beam induced currents
Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
High frequency resistive switching behavior of amorphous TiO2 and NiO
Resistive switching in Pt/TiO2/Pt
Integration and characterization of atomic layer deposited TiO2 thin films for resistive switching applications
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Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory
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