Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory ; volume:9 ; number:1 ; day:23 ; month:12 ; year:2014 ; pages:1-7 ; date:12.2014
Nanoscale research letters ; 9, Heft 1 (23.12.2014), 1-7, 12.2014
- Urheber
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Zhang, Meiyun
Long, Shibing
Wang, Guoming
Liu, Ruoyu
Xu, Xiaoxin
Li, Yang
Xu, Dinlin
Liu, Qi
Lv, Hangbing
Miranda, Enrique
Suñé, Jordi
Liu, Ming
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1186/1556-276X-9-694
- URN
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urn:nbn:de:101:1-2021080921334336286370
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:57 MESZ
Datenpartner
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Beteiligte
- Zhang, Meiyun
- Long, Shibing
- Wang, Guoming
- Liu, Ruoyu
- Xu, Xiaoxin
- Li, Yang
- Xu, Dinlin
- Liu, Qi
- Lv, Hangbing
- Miranda, Enrique
- Suñé, Jordi
- Liu, Ming
- SpringerLink (Online service)
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