Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

to related objects

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory ; volume:9 ; number:1 ; day:23 ; month:12 ; year:2014 ; pages:1-7 ; date:12.2014
Nanoscale research letters ; 9, Heft 1 (23.12.2014), 1-7, 12.2014

Creator
Zhang, Meiyun
Long, Shibing
Wang, Guoming
Liu, Ruoyu
Xu, Xiaoxin
Li, Yang
Xu, Dinlin
Liu, Qi
Lv, Hangbing
Miranda, Enrique
Suñé, Jordi
Liu, Ming
Contributor
SpringerLink (Online service)

DOI
10.1186/1556-276X-9-694
URN
urn:nbn:de:101:1-2021080921334336286370
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:57 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Show original at data provider

Associated

  • Zhang, Meiyun
  • Long, Shibing
  • Wang, Guoming
  • Liu, Ruoyu
  • Xu, Xiaoxin
  • Li, Yang
  • Xu, Dinlin
  • Liu, Qi
  • Lv, Hangbing
  • Miranda, Enrique
  • Suñé, Jordi
  • Liu, Ming
  • SpringerLink (Online service)

Other Objects (12)

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Numerische Untersuchungen zu rotationssymmetrischen Strömungen im konzentrischen Kugelspalt

Hochschulschrift

Numerische Untersuchungen zu rotationssymmetrischen Strömungen im konzentrischen Kugelspalt

Optimizing coal water slurry concentration via synergistic coal blending and particle size distribution

Optimizing coal water slurry concentration via synergistic coal blending and particle size distribution

Integrative bioinformatics analysis of KPNA2 in six major human cancers

Integrative bioinformatics analysis of KPNA2 in six major human cancers

“Climate change” vs. “global warming”: A corpus-assisted discourse analysis of two popular terms in The New York Times

“Climate change” vs. “global warming”: A corpus-assisted discourse analysis of two popular terms in The New York Times

Bilingual education in China: a qualitative synthesis of research on models and perceptions

Bilingual education in China: a qualitative synthesis of research on models and perceptions

A truncated nuclear norm and graph-Laplacian regularized low-rank representation method for tumor clustering and gene selection

A truncated nuclear norm and graph-Laplacian regularized low-rank representation method for tumor clustering and gene selection

Crystal structure of 1′,3′-dihydro-2,2′-spirobi (indene)-1,3-dione, C 17 H 12 O 2

Crystal structure of 1′,3′-dihydro-2,2′-spirobi (indene)-1,3-dione, C 17 H 12 O 2

Related objects