Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory ; volume:14 ; number:1 ; day:9 ; month:5 ; year:2019 ; pages:1-7 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (9.5.2019), 1-7, 12.2019
- Creator
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Ding, Xiangxiang
Feng, Yulin
Huang, Peng
Liu, Lifeng
Kang, Jinfeng
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-019-2956-4
- URN
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urn:nbn:de:101:1-2019090119435023387697
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:34 AM CEST
Data provider
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Associated
- Ding, Xiangxiang
- Feng, Yulin
- Huang, Peng
- Liu, Lifeng
- Kang, Jinfeng
- SpringerLink (Online service)
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