Hochschulschrift
Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783896752703
3896752707
- Dimensions
-
25 cm
- Extent
-
V, 178 S.
- Language
-
Englisch
- Notes
-
graph. Darst.
Zugl.: Bremen, Univ., Diss., 1997
- Keyword
-
Silicium
Elastische Deformation
Elektronischer Transport
Monte-Carlo-Simulation
Silicium
Germanium
Mischkristall
Elastische Deformation
Elektronischer Transport
Monte-Carlo-Simulation
- Event
-
Veröffentlichung
- (where)
-
München
- (who)
-
Utz, Wiss.
- (when)
-
1998
- Creator
-
Bufler, Fabian M.
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.03.2025, 12:28 PM CET
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Bufler, Fabian M.
- Utz, Wiss.
Time of origin
- 1998
Other Objects (12)
Hard and soft electrons and holes
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24 and 36 GHz SiGe HBT power amplifiers
Coplanar and microstrip oscillators in SiGe SIMMWIC technology
Ordering of self-assembled Ge and SiGe nanostructures on vicinal Si surfaces
Thermal transport through SiGe superlattices
Thermal transport through SiGe superlattices
Physical modelling of advanced SiGe transistors
Physical modelling of advanced SiGe transistors
Micro-Raman investigation of mechanical stress in Si device structures and phonons in SiGe
Micro-Raman investigation of mechanical stress in Si devise structures and phonons in SiGe
Hard and soft electrons and holes
Bauelemententwicklung am Beispiel SiGe
Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM
24 and 36 GHz SiGe HBT power amplifiers
Coplanar and microstrip oscillators in SiGe SIMMWIC technology
Ordering of self-assembled Ge and SiGe nanostructures on vicinal Si surfaces
Thermal transport through SiGe superlattices
Thermal transport through SiGe superlattices
Physical modelling of advanced SiGe transistors
Physical modelling of advanced SiGe transistors
Micro-Raman investigation of mechanical stress in Si device structures and phonons in SiGe
Micro-Raman investigation of mechanical stress in Si devise structures and phonons in SiGe
Hard and soft electrons and holes
Bauelemententwicklung am Beispiel SiGe
Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM
24 and 36 GHz SiGe HBT power amplifiers
Coplanar and microstrip oscillators in SiGe SIMMWIC technology
Ordering of self-assembled Ge and SiGe nanostructures on vicinal Si surfaces
Thermal transport through SiGe superlattices
Thermal transport through SiGe superlattices
Physical modelling of advanced SiGe transistors
Physical modelling of advanced SiGe transistors
Micro-Raman investigation of mechanical stress in Si device structures and phonons in SiGe