Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: Journal of Physics D: Applied Physics 55.10 (2022): 105303.

Event: Veröffentlichung

(where): Erlangen

(who): Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)

(when): 2021

Creator: Kobayashi, Takuma
Rühl, Maximilian
Lehmeyer, Johannes
Zimmermann, Leonard K. S.
Krieger, Michael
Weber, Heiko B.

DOI: 10.1088/1361-6463/ac3a49

URN: urn:nbn:de:bvb:29-opus4-181454

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:23 AM CEST

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Associated

Kobayashi, Takuma
Rühl, Maximilian
Lehmeyer, Johannes
Zimmermann, Leonard K. S.
Krieger, Michael
Weber, Heiko B.
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)

Time of origin

2021

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Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

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Other Objects (12)

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

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Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications

Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices

Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms

Annealing mechanisms of point defects in silicon carbide : a theoretical investigation

Annealing mechanisms of point defects in silicon carbide : a theoretical investigation

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An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors

An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors

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Deep defect centers in 4H and 6H silicon carbide

Spin-acoustic control of silicon vacancies in 4H silicon carbide

Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications

Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices

Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms

Annealing mechanisms of point defects in silicon carbide : a theoretical investigation

Annealing mechanisms of point defects in silicon carbide : a theoretical investigation

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An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors

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Spin-acoustic control of silicon vacancies in 4H silicon carbide

Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications

Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices

Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms

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