An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: Communications Physics 2 (2019).
- Ereignis
-
Veröffentlichung
- (wo)
-
Erlangen
- (wer)
-
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (wann)
-
2019
- Urheber
- URN
-
urn:nbn:de:bvb:29-opus4-110558
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:56 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Hauck, Martin
- Lehmeyer, Johannes
- Pobegen, Gregor
- Weber, Heiko B.
- Krieger, Michael
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Entstanden
- 2019
Ähnliche Objekte (12)
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Semiconductor nanowires and their field-effect devices
Deep defect centers in 4H and 6H silicon carbide
ZnO-based metal-semiconductor field-effect transistors
Silicon carbide field-effect transistor (FET) transducers for harsh environment applications
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Toward Low-Power Cryogenic Metal-Oxide Semiconductor Field-Effect Transistors
Silicon carbide - graphene nano-gratings on 4H and 6H semi-insulating SiC
Bipolar transport in organic field-effect transistors: organic semiconductor blends versus contact modification
Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC
Behaviour of 4H-SiC Power Semiconductor Devices under Extreme Operating Conditions
Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Semiconductor nanowires and their field-effect devices
Deep defect centers in 4H and 6H silicon carbide
ZnO-based metal-semiconductor field-effect transistors
Silicon carbide field-effect transistor (FET) transducers for harsh environment applications
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Toward Low-Power Cryogenic Metal-Oxide Semiconductor Field-Effect Transistors
Silicon carbide - graphene nano-gratings on 4H and 6H semi-insulating SiC
Bipolar transport in organic field-effect transistors: organic semiconductor blends versus contact modification
Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC
Behaviour of 4H-SiC Power Semiconductor Devices under Extreme Operating Conditions
Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Semiconductor nanowires and their field-effect devices
Deep defect centers in 4H and 6H silicon carbide
ZnO-based metal-semiconductor field-effect transistors
Silicon carbide field-effect transistor (FET) transducers for harsh environment applications
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Toward Low-Power Cryogenic Metal-Oxide Semiconductor Field-Effect Transistors
Silicon carbide - graphene nano-gratings on 4H and 6H semi-insulating SiC
Bipolar transport in organic field-effect transistors: organic semiconductor blends versus contact modification
Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC
Behaviour of 4H-SiC Power Semiconductor Devices under Extreme Operating Conditions