An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Communications Physics 2 (2019).
- Event
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Veröffentlichung
- (where)
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Erlangen
- (who)
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Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (when)
-
2019
- Creator
- URN
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urn:nbn:de:bvb:29-opus4-110558
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:56 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Hauck, Martin
- Lehmeyer, Johannes
- Pobegen, Gregor
- Weber, Heiko B.
- Krieger, Michael
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Time of origin
- 2019
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Semiconductor nanowires and their field-effect devices
Deep defect centers in 4H and 6H silicon carbide
ZnO-based metal-semiconductor field-effect transistors
Silicon carbide field-effect transistor (FET) transducers for harsh environment applications
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