Hochschulschrift
Heteroepitaxial Growth of GaN Nanostructures via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon using Graphene as Buffer Layer
- Weitere Titel
-
Heteroepitaktisches Wachstum von GaN Nanostrukturen mittels metallorganischer Gasphasenepitaxie auf Saphir und Silizium unter Anwendung von Graphen als Zwischenschicht
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Erlangen, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Dissertation, 2016
- Klassifikation
-
Physik
- Schlagwort
-
MOVPE
Galliumnitrid
Nanodraht
Graphen
Heteroepitaxie
- Ereignis
-
Veröffentlichung
- (wo)
-
Erlangen
- (wer)
-
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (wann)
-
2017
- Urheber
- Beteiligte Personen und Organisationen
- URN
-
urn:nbn:de:bvb:29-opus4-82223
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:44 MEZ
Datenpartner
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Objekttyp
- Hochschulschrift
Beteiligte
- Heilmann, Martin
- Leuchs, Gerd
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Entstanden
- 2017
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