Hochschulschrift
Heteroepitaxial Growth of GaN Nanostructures via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon using Graphene as Buffer Layer
- Alternative title
-
Heteroepitaktisches Wachstum von GaN Nanostrukturen mittels metallorganischer Gasphasenepitaxie auf Saphir und Silizium unter Anwendung von Graphen als Zwischenschicht
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Erlangen, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Dissertation, 2016
- Classification
-
Physik
- Keyword
-
MOVPE
Galliumnitrid
Nanodraht
Graphen
Heteroepitaxie
- Event
-
Veröffentlichung
- (where)
-
Erlangen
- (who)
-
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (when)
-
2017
- Creator
- Contributor
- URN
-
urn:nbn:de:bvb:29-opus4-82223
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:44 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Heilmann, Martin
- Leuchs, Gerd
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Time of origin
- 2017
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