Multifunctional titanium oxide layers in silicon heterojunction solar cells formed via selective anodization

Abstract: Herein, a novel strategy is introduced to reduce the consumption of scarce materials in silicon heterojunction solar cells by combining approaches for Ag replacement in the metallization and a reduction of the indium tin oxide layer thickness: a Ti layer deposited by physical vapor deposition serves both as the contact layer of a copper-based metallization and after electrochemical oxidation as capping layer enabling the use of a thinner transparent conductive oxide. Further, the TiOx layer can build an encapsulation layer. While oxygen evolution and metal dissolution are found to be critical side reactions, a nonaqueous electrolyte is found in which these reactions can be avoided. The application on silicon heterojunction solar cells shows promising first results, exhibiting a short circuit current density of 35 mA cm−2 and a cell efficiency of close to 21% despite nonoptimized layer thicknesses

Object Details

• Location: Deutsche Nationalbibliothek Frankfurt am Main
• Extent: Online-Ressource
• Language: Englisch
• Notes: Solar RRL. - 7, 19 (2023) , 2300418, ISSN: 2367-198X

Classification and Topics

• Classification: Elektrotechnik, Elektronik

Contributors, Places and Time

• Event: Veröffentlichung
• (where): Freiburg
• (who): Universität
• (when): 2024
• Creator: Jakob, Leonie ; Tutsch, Leonard ; Hatt, Thibaud ; Westraadt, Johan ; Ngongo, Sinoyolo ; Glatthaar, Markus ; Bivour, Martin ; Bartsch, Jonas

Further information

• DOI: 10.1002/solr.202300418
• URN: urn:nbn:de:bsz:25-freidok-2557357
• Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Last update: 25.03.2025, 1:51 PM CET