- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Rheinisch-Westfälische Technische Hochschule Aachen, Dissertation, 2021
- Keyword
-
Lasers
Design
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
Universitätsbibliothek der RWTH Aachen
- (when)
-
2022
- Creator
- Contributor
- DOI
-
10.18154/RWTH-2022-02880
- URN
-
urn:nbn:de:101:1-2022042803261634872217
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:48 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Marzban, Bahareh
- Witzens, Jeremy
- Vescan, Andrei
- Universitätsbibliothek der RWTH Aachen
Time of origin
- 2022
Other Objects (12)
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Investigation of GeSn as novel group IV semiconductor for electronic Applications
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Phase relations in Zn-group IV-oxide nitride (IV: Ge, Sn) wide gap semiconductors
Synthesen und Strukturen von speziellen Ge(II)- [Ge-] und Sn(II)-Chelaten [Sn-Chelaten]
Ramanstreuung an α-Sn [alpha-Sn], Si und Ge Übergittern
Group IV (Si)GeSn light emission and lasing studies
Group IV (Si)GeSn light emission and lasing studies
Modeling of SiGeSn-based semiconductor heterostructures for optoelectronic applications
Molekularstrahlepitaxie von isotopenreinen Ge- und α-Sn/Ge-Heterostrukturen [Alpha-Sn/Ge-Heterostrukturen]
Investigation of GeSn as novel group IV semiconductor for electronic Applications
Investigation of GeSn as Novel Group IV Semiconductor for Electronic Applications
Si/Ge- und Ge/α-Sn-Übergitter [Ge-alpha-Sn-Übergitter] : Herstellung und transmissionselektronenmikroskopische Charakterisierung
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Phase relations in Zn-group IV-oxide nitride (IV: Ge, Sn) wide gap semiconductors
Synthesen und Strukturen von speziellen Ge(II)- [Ge-] und Sn(II)-Chelaten [Sn-Chelaten]
Ramanstreuung an α-Sn [alpha-Sn], Si und Ge Übergittern
Group IV (Si)GeSn light emission and lasing studies
Group IV (Si)GeSn light emission and lasing studies
Modeling of SiGeSn-based semiconductor heterostructures for optoelectronic applications
Molekularstrahlepitaxie von isotopenreinen Ge- und α-Sn/Ge-Heterostrukturen [Alpha-Sn/Ge-Heterostrukturen]
Investigation of GeSn as novel group IV semiconductor for electronic Applications
Investigation of GeSn as Novel Group IV Semiconductor for Electronic Applications
Si/Ge- und Ge/α-Sn-Übergitter [Ge-alpha-Sn-Übergitter] : Herstellung und transmissionselektronenmikroskopische Charakterisierung
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Phase relations in Zn-group IV-oxide nitride (IV: Ge, Sn) wide gap semiconductors
Synthesen und Strukturen von speziellen Ge(II)- [Ge-] und Sn(II)-Chelaten [Sn-Chelaten]