- Alternative title
-
Untersuchung von Lichtemission und Lasing an Gruppe IV (Si)GeSn
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
RWTH Aachen University, Dissertation, 2019
- Bibliographic citation
-
Reihe Schlüsseltechnologien/Key technologies ; 193
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
Universitätsbibliothek der RWTH Aachen
- (when)
-
2019
- Creator
- Contributor
-
Grützmacher, Detlev
Taubner, Thomas Günter
- DOI
-
10.18154/RWTH-2019-03039
- URN
-
urn:nbn:de:101:1-2019082206382357782587
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:48 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Stange, Daniela
- Grützmacher, Detlev
- Taubner, Thomas Günter
- Universitätsbibliothek der RWTH Aachen
Time of origin
- 2019
Other Objects (12)
Group IV (Si)GeSn light emission and lasing studies
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Design and modeling of group IV (Si)GeSn lasers
Molekularstrahlepitaxie von isotopenreinen Ge- und α-Sn/Ge-Heterostrukturen [Alpha-Sn/Ge-Heterostrukturen]
Investigation of GeSn as novel group IV semiconductor for electronic Applications
Investigation of GeSn as Novel Group IV Semiconductor for Electronic Applications
Si/Ge- und Ge/α-Sn-Übergitter [Ge-alpha-Sn-Übergitter] : Herstellung und transmissionselektronenmikroskopische Charakterisierung
Light emission from perovskite materials
Phase relations in Zn-group IV-oxide nitride (IV: Ge, Sn) wide gap semiconductors
Superdirectional light emission and emission reversal from microcavity arrays
Synthesen und Strukturen von speziellen Ge(II)- [Ge-] und Sn(II)-Chelaten [Sn-Chelaten]
Group IV (Si)GeSn light emission and lasing studies
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Design and modeling of group IV (Si)GeSn lasers
Molekularstrahlepitaxie von isotopenreinen Ge- und α-Sn/Ge-Heterostrukturen [Alpha-Sn/Ge-Heterostrukturen]
Investigation of GeSn as novel group IV semiconductor for electronic Applications
Investigation of GeSn as Novel Group IV Semiconductor for Electronic Applications
Si/Ge- und Ge/α-Sn-Übergitter [Ge-alpha-Sn-Übergitter] : Herstellung und transmissionselektronenmikroskopische Charakterisierung
Light emission from perovskite materials
Phase relations in Zn-group IV-oxide nitride (IV: Ge, Sn) wide gap semiconductors
Superdirectional light emission and emission reversal from microcavity arrays
Synthesen und Strukturen von speziellen Ge(II)- [Ge-] und Sn(II)-Chelaten [Sn-Chelaten]
Group IV (Si)GeSn light emission and lasing studies
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
Design and modeling of group IV (Si)GeSn lasers
Molekularstrahlepitaxie von isotopenreinen Ge- und α-Sn/Ge-Heterostrukturen [Alpha-Sn/Ge-Heterostrukturen]
Investigation of GeSn as novel group IV semiconductor for electronic Applications
Investigation of GeSn as Novel Group IV Semiconductor for Electronic Applications
Si/Ge- und Ge/α-Sn-Übergitter [Ge-alpha-Sn-Übergitter] : Herstellung und transmissionselektronenmikroskopische Charakterisierung
Light emission from perovskite materials
Phase relations in Zn-group IV-oxide nitride (IV: Ge, Sn) wide gap semiconductors
Superdirectional light emission and emission reversal from microcavity arrays