Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition ; volume:13 ; number:1 ; day:3 ; month:3 ; year:2023 ; pages:1-7 ; date:12.2023
Scientific reports ; 13, Heft 1 (3.3.2023), 1-7, 12.2023
- Classification
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Elektrotechnik, Elektronik
- Creator
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Takakura, Ryo
Murakami, Seigo
Watanabe, Kaname
Takigawa, Ryo
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41598-023-30376-7
- URN
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urn:nbn:de:101:1-2024020911200573421131
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:32 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Takakura, Ryo
- Murakami, Seigo
- Watanabe, Kaname
- Takigawa, Ryo
- SpringerLink (Online service)
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Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing
Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy
Atomic layer deposited films of Al2O3 on fluorine-doped tin oxide electrodes: stability and barrier properties
Lipase-Driven, Room-Temperature Solubilization Processes of Deposited Fat-Based Stains
Stabilization of the stainless-steel interface using sequentially deposited Al2O3 nano films using atomic layer deposition (ALD) technique
Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer
Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers
Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing
Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
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Atomic layer deposited films of Al2O3 on fluorine-doped tin oxide electrodes: stability and barrier properties
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