Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer ; volume:14 ; number:1 ; day:16 ; month:4 ; year:2019 ; pages:1-8 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (16.4.2019), 1-8, 12.2019
- Creator
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Zhang, Yan
Ren, Qing Hua
Chai, Xiao Jie
Jiang, Jun
Yang, Jian Guo
Jiang, An Quan
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-019-2970-6
- URN
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urn:nbn:de:101:1-2019051021421637149750
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:47 AM CEST
Data provider
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Associated
- Zhang, Yan
- Ren, Qing Hua
- Chai, Xiao Jie
- Jiang, Jun
- Yang, Jian Guo
- Jiang, An Quan
- SpringerLink (Online service)
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