Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Stuttgart, Universität Stuttgart, Dissertation, 2019
- Keyword
-
Silicon
Silicon carbide
- Event
-
Veröffentlichung
- (where)
-
Stuttgart
- (who)
-
Universitätsbibliothek der Universität Stuttgart
- (when)
-
2019
- Creator
- Contributor
-
Anders, Jens
- DOI
-
10.18419/opus-10653
- URN
-
urn:nbn:de:bsz:93-opus-ds-106704
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
- 14.08.2025, 10:44 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Nagy, Roland
- Anders, Jens
- Universitätsbibliothek der Universität Stuttgart
Time of origin
- 2019
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Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
Deep defect centers in 4H and 6H silicon carbide
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Spin-acoustic control of silicon vacancies in 4H silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
Deep defect centers in 4H and 6H silicon carbide
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Spin-acoustic control of silicon vacancies in 4H silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
Deep defect centers in 4H and 6H silicon carbide
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices