Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe 2 Field‐Effect Transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe 2 Field‐Effect Transistors ; day:08 ; month:05 ; year:2024 ; extent:8
Advanced electronic materials ; (08.05.2024) (gesamt 8)
- Urheber
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Ali, Fida
Choi, Hyungyu
Ali, Nasir
Hassan, Yasir
Ngo, Tien Dat
Ahmed, Faisal
Park, Won‐Kyu
Sun, Zhipei
Yoo, Won Jong
- DOI
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10.1002/aelm.202400071
- URN
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urn:nbn:de:101:1-2405081443018.246953207594
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:58 MESZ
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Beteiligte
- Ali, Fida
- Choi, Hyungyu
- Ali, Nasir
- Hassan, Yasir
- Ngo, Tien Dat
- Ahmed, Faisal
- Park, Won‐Kyu
- Sun, Zhipei
- Yoo, Won Jong
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ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
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High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching
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