Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 1556-276X

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire ; volume:12 ; number:1 ; day:8 ; month:6 ; year:2017 ; pages:1-9 ; date:12.2017
Nanoscale research letters ; 12, Heft 1 (8.6.2017), 1-9, 12.2017

Classification: Physik

Creator: Tsykaniuk, Bogdan I.

Contributor: Nikolenko, Andrii S.
Strelchuk, Viktor V.
Naseka, Viktor M.
Mazur, Yuriy I.
Ware, Morgan E.
DeCuir, Eric A.
Sadovyi, Bogdan
Weyher, Jan L.
Jakiela, Rafal
Salamo, Gregory J.
Belyaev, Alexander E.
SpringerLink (Online service)

DOI: 10.1186/s11671-017-2171-0

URN: urn:nbn:de:1111-201711027068

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:36 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

Tsykaniuk, Bogdan I.
Nikolenko, Andrii S.
Strelchuk, Viktor V.
Naseka, Viktor M.
Mazur, Yuriy I.
Ware, Morgan E.
DeCuir, Eric A.
Sadovyi, Bogdan
Weyher, Jan L.
Jakiela, Rafal
Salamo, Gregory J.
Belyaev, Alexander E.
SpringerLink (Online service)

Other Objects (12)

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition

Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

Realization of Conductive n‐Type Doped α ‐Ga 2 O 3 on m ‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process

Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)

Hochschulschrift

Microstructural characterization of yttria-stabilized zirconia thermal barrier coatings grown on sapphire substrates

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Microstructural evolution and solid state dewetting of epitaxial Al thin films on sapphire (α-Al2O3)

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Rapid fabrication and interface structure of highly faceted epitaxial Ni-Au solid solution nanoparticles on sapphire

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition

Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

Realization of Conductive n‐Type Doped α ‐Ga 2 O 3 on m ‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process

Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)

Hochschulschrift

Microstructural characterization of yttria-stabilized zirconia thermal barrier coatings grown on sapphire substrates

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Microstructural evolution and solid state dewetting of epitaxial Al thin films on sapphire (α-Al2O3)

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Rapid fabrication and interface structure of highly faceted epitaxial Ni-Au solid solution nanoparticles on sapphire

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition

Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

Realization of Conductive n‐Type Doped α ‐Ga 2 O 3 on m ‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process

Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)

Hochschulschrift

Microstructural characterization of yttria-stabilized zirconia thermal barrier coatings grown on sapphire substrates

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Microstructural evolution and solid state dewetting of epitaxial Al thin films on sapphire (α-Al2O3)

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Rapid fabrication and interface structure of highly faceted epitaxial Ni-Au solid solution nanoparticles on sapphire

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Object Details

References and Relationships

Classification and Topics

Contributors, Places and Time

Further information

Data provider

Associated

Other Objects (12)

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition

Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

Realization of Conductive n‐Type Doped α ‐Ga 2 O 3 on m ‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process

Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)

Microstructural characterization of yttria-stabilized zirconia thermal barrier coatings grown on sapphire substrates

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Microstructural evolution and solid state dewetting of epitaxial Al thin films on sapphire (α-Al2O3)

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Rapid fabrication and interface structure of highly faceted epitaxial Ni-Au solid solution nanoparticles on sapphire

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition

Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

Realization of Conductive n‐Type Doped α ‐Ga 2 O 3 on m ‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process

Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)

Microstructural characterization of yttria-stabilized zirconia thermal barrier coatings grown on sapphire substrates

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Microstructural evolution and solid state dewetting of epitaxial Al thin films on sapphire (α-Al2O3)

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Rapid fabrication and interface structure of highly faceted epitaxial Ni-Au solid solution nanoparticles on sapphire

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition

Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

Realization of Conductive n‐Type Doped α ‐Ga 2 O 3 on m ‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process

Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)

Microstructural characterization of yttria-stabilized zirconia thermal barrier coatings grown on sapphire substrates

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Microstructural evolution and solid state dewetting of epitaxial Al thin films on sapphire (α-Al2O3)

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Rapid fabrication and interface structure of highly faceted epitaxial Ni-Au solid solution nanoparticles on sapphire

Related objects

Reset password