Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: 10.1016/j.actamat.2017.08.050
- Ereignis
-
Veröffentlichung
- (wo)
-
Aachen
- (wer)
-
Universitätsbibliothek der RWTH Aachen
- (wann)
-
2017
- Urheber
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Hieke, S. W.
Dehm, G.
Scheu, C.
- DOI
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10.18154/RWTH-2017-10200
- URN
-
urn:nbn:de:101:1-2018101807070586529219
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:32 MESZ
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Beteiligte
- Hieke, S. W.
- Dehm, G.
- Scheu, C.
- Universitätsbibliothek der RWTH Aachen
Entstanden
- 2017
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