Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire ; volume:12 ; number:1 ; day:8 ; month:6 ; year:2017 ; pages:1-9 ; date:12.2017
Nanoscale research letters ; 12, Heft 1 (8.6.2017), 1-9, 12.2017
- Klassifikation
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Physik
- Urheber
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Tsykaniuk, Bogdan I.
- Beteiligte Personen und Organisationen
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Nikolenko, Andrii S.
Strelchuk, Viktor V.
Naseka, Viktor M.
Mazur, Yuriy I.
Ware, Morgan E.
DeCuir, Eric A.
Sadovyi, Bogdan
Weyher, Jan L.
Jakiela, Rafal
Salamo, Gregory J.
Belyaev, Alexander E.
SpringerLink (Online service)
- DOI
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10.1186/s11671-017-2171-0
- URN
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urn:nbn:de:1111-201711027068
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:36 MESZ
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Beteiligte
- Tsykaniuk, Bogdan I.
- Nikolenko, Andrii S.
- Strelchuk, Viktor V.
- Naseka, Viktor M.
- Mazur, Yuriy I.
- Ware, Morgan E.
- DeCuir, Eric A.
- Sadovyi, Bogdan
- Weyher, Jan L.
- Jakiela, Rafal
- Salamo, Gregory J.
- Belyaev, Alexander E.
- SpringerLink (Online service)
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Optimizing GaN (11 2 ‾ 2) hetero‐epitaxial templates grown on (10 1 ‾ 0) sapphire
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Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition
Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition
Realization of Conductive n‐Type Doped α ‐Ga 2 O 3 on m ‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process
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Microstructural characterization of yttria-stabilized zirconia thermal barrier coatings grown on sapphire substrates
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