- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: Murphy, J.D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V.V. et al.: The effect of oxide precipitates on minority carrier lifetime in n-type silicon. In: Journal of Applied Physics 118 (2015), Nr. 21, 215706. DOI: https://doi.org/10.1063/1.4936852
- Event
-
Veröffentlichung
- (where)
-
Hannover
- (who)
-
Gottfried Wilhelm Leibniz Universität Hannover
- (when)
-
2015
- Event
-
Veröffentlichung
- (where)
-
Hannover
- (who)
-
Technische Informationsbibliothek (TIB)
- (when)
-
2015
- Creator
-
Murphy, J.D.
Al-Amin, M.
Bothe, K.
Olmo, M.
Voronkov, V.V.
Falster, R.J.
- DOI
-
10.15488/4504
- URN
-
urn:nbn:de:101:1-2020081207380350169327
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:47 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Murphy, J.D.
- Al-Amin, M.
- Bothe, K.
- Olmo, M.
- Voronkov, V.V.
- Falster, R.J.
- Gottfried Wilhelm Leibniz Universität Hannover
- Technische Informationsbibliothek (TIB)
Time of origin
- 2015
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Minority carrier lifetime monitoring in a buried contact solar cells process using MC-SI
Long-term carrier lifetime instabilities in n-type FZ- and Cz-silicon under illumination at elevated temperature
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Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films
Evaluation of capacitance-voltage spectroscopy by correlation with minority carrier lifetime measurements of PECV-deposited intrinsic amorphous layers
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Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
Understanding and resolving the discrepancy between differential and actual minority carrier lifetime
Low‐Temperature Saw Damage Gettering to Improve Minority Carrier Lifetime in Multicrystalline Silicon
Minority charge carrier lifetime mapping of crystalline silicon wafers by time-resolved photoluminescence imaging
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Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films
Evaluation of capacitance-voltage spectroscopy by correlation with minority carrier lifetime measurements of PECV-deposited intrinsic amorphous layers