Model based prediction of the trap limited diffusion of hydrogen in post-hydrogenated amorphous silicon
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Physica Status Solidi (RRL) - Rapid Research Letters ; 10 (2016), 11. - S. 828-832. - ISSN 1862-6270. - eISSN 1862-6254
- Ereignis
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Veröffentlichung
- (wo)
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Konstanz
- (wer)
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KOPS Universität Konstanz
- (wann)
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2016
- Urheber
- URN
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urn:nbn:de:bsz:352-2-7wwgke37rf4d3
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:31 MESZ
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Beteiligte
- Gerke, Sebastian
- Becker, Hans-Werner
- Rogalla, Detlef
- Job, Reinhart
- Terheiden, Barbara
- KOPS Universität Konstanz
Entstanden
- 2016
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Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures
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