Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures ; volume:257 ; number:9 ; year:2020 ; extent:8
Physica status solidi / B. B, Basic solid state physics ; 257, Heft 9 (2020) (gesamt 8)
- Creator
- DOI
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10.1002/pssb.202000097
- URN
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urn:nbn:de:101:1-2022062707031694564636
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:25 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Jafari, Sahar
- Steffens, Jonathan
- Wendt, Michael
- Terheiden, Barbara
- Meyer, Sylke
- Lausch, Dominik
Other Objects (12)
Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures
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Model based prediction of the trap limited diffusion of hydrogen in post-hydrogenated amorphous silicon
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Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
CVD Boron Containing Glasses - An Attractive Alternative Diffusion Source for High Quality Emitters and Simplified Processing : A Review
Correlation between the optical bandgap and the monohydride bond density of hydrogenated amorphous silicon
Model based prediction of the trap limited diffusion of hydrogen in post-hydrogenated amorphous silicon
Void formation on PERC solar cells and their impact on the electrical cell parameters verified by luminescence and scanning acoustic microscope measurements
Changes in passivation quality of PECV-deposited hydrogenated amorphous silicon layers used in solar cells due to sputter deposition of TCOs
Electrical, optical and structural investigation of low-temperature PECV-deposited hydrogenated amphorous silicon-oxynitride films for surface passivation of crystalline silicon solar cells
Influence of the electrodes' distance upon the electrical, optical and structural properties of PECV-deposited hydrogenated amorphous silicon films for heterojunction solar cell application
Temperature dependence of void formation in PERC cells and their spatially resolved detection by combining scanning acoustic microscopy and electroluminescence measurements
Al-density variation as one driving force for void formation in PERC solar cells
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
CVD Boron Containing Glasses - An Attractive Alternative Diffusion Source for High Quality Emitters and Simplified Processing : A Review
Correlation between the optical bandgap and the monohydride bond density of hydrogenated amorphous silicon
Model based prediction of the trap limited diffusion of hydrogen in post-hydrogenated amorphous silicon
Void formation on PERC solar cells and their impact on the electrical cell parameters verified by luminescence and scanning acoustic microscope measurements
Changes in passivation quality of PECV-deposited hydrogenated amorphous silicon layers used in solar cells due to sputter deposition of TCOs
Electrical, optical and structural investigation of low-temperature PECV-deposited hydrogenated amphorous silicon-oxynitride films for surface passivation of crystalline silicon solar cells
Influence of the electrodes' distance upon the electrical, optical and structural properties of PECV-deposited hydrogenated amorphous silicon films for heterojunction solar cell application
Temperature dependence of void formation in PERC cells and their spatially resolved detection by combining scanning acoustic microscopy and electroluminescence measurements
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