Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers ; volume:9 ; number:1 ; day:25 ; month:11 ; year:2014 ; pages:1-6 ; date:12.2014
Nanoscale research letters ; 9, Heft 1 (25.11.2014), 1-6, 12.2014
- Creator
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Cao, Yunqing
Lu, Peng
Zhang, Xiaowei
Xu, Jun
Xu, Ling
Chen, Kunji
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/1556-276X-9-634
- URN
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urn:nbn:de:101:1-2021090319281188346286
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:24 AM CEST
Data provider
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Associated
- Cao, Yunqing
- Lu, Peng
- Zhang, Xiaowei
- Xu, Jun
- Xu, Ling
- Chen, Kunji
- SpringerLink (Online service)
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