DFT modelling of the edge dislocation in 4H-SiC

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 1573-4803

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: DFT modelling of the edge dislocation in 4H-SiC ; volume:54 ; number:15 ; day:26 ; month:4 ; year:2019 ; pages:10737-10745 ; date:8.2019
Journal of materials science ; 54, Heft 15 (26.4.2019), 10737-10745, 8.2019

Creator: Łażewski, J.
Jochym, P. T.
Piekarz, P.
Sternik, M.
Parlinski, K.
Cholewiński, J.
Dłużewski, P.
Krukowski, S.

Contributor: SpringerLink (Online service)

DOI: 10.1007/s10853-019-03630-5

URN: urn:nbn:de:101:1-2019112821592972564438

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 11:01 AM CEST

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Associated

Łażewski, J.
Jochym, P. T.
Piekarz, P.
Sternik, M.
Parlinski, K.
Cholewiński, J.
Dłużewski, P.
Krukowski, S.
SpringerLink (Online service)

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Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

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Exhaustive characterization of modified Si vacancies in 4H-SiC

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Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

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Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

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DFT modelling of the edge dislocation in 4H-SiC

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Other Objects (12)

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

Dotierung von 4H-SiC durch Ionenimplantation

Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC

Aktivierung von Aluminium implantiert in 4H-SiC

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

Exhaustive characterization of modified Si vacancies in 4H-SiC

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

4h Altenkrempe

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

Dotierung von 4H-SiC durch Ionenimplantation

Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC

Aktivierung von Aluminium implantiert in 4H-SiC

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

Exhaustive characterization of modified Si vacancies in 4H-SiC

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

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4h Altenkrempe

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

Dotierung von 4H-SiC durch Ionenimplantation

Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC

Aktivierung von Aluminium implantiert in 4H-SiC

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

Exhaustive characterization of modified Si vacancies in 4H-SiC

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

4h Altenkrempe

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