Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes ; day:05 ; month:05 ; year:2023 ; extent:9
Advanced functional materials ; (05.05.2023) (gesamt 9)
- Urheber
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Völkel, Lukas
Braun, Dennis
Belete, Melkamu
Kataria, Satender
Wahlbrink, Thorsten
Ran, Ke
Kistermann, Kevin
Mayer, Joachim
Menzel, Stephan
Daus, Alwin
Lemme, Max Christian
- DOI
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10.1002/adfm.202300428
- URN
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urn:nbn:de:101:1-2023050515333349289419
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:47 MESZ
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Beteiligte
- Völkel, Lukas
- Braun, Dennis
- Belete, Melkamu
- Kataria, Satender
- Wahlbrink, Thorsten
- Ran, Ke
- Kistermann, Kevin
- Mayer, Joachim
- Menzel, Stephan
- Daus, Alwin
- Lemme, Max Christian
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