Melkamu Belete
Hat mitgewirkt an:
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Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
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Step tunneling-enhanced hot-electron injection in vertical graphene base transistors
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Large Scale MoS2/Si Photodiodes with Graphene Transparent Electrodes
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Two dimensional materials-based vertical heterojunction devices for electronics, optoelectronics and neuromorphic applications