Lattice‐Mismatched Epitaxy of InAs on (111) A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Lattice‐Mismatched Epitaxy of InAs on (111) A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots ; day:10 ; month:01 ; year:2024 ; extent:13
Physica status solidi / A. A, Applications and materials science ; (10.01.2024) (gesamt 13)
- Creator
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Mano, Takaaki
Ohtake, Akihiro
Kuroda, Takashi
- DOI
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10.1002/pssa.202300767
- URN
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urn:nbn:de:101:1-2024011114023288545250
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:23 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Mano, Takaaki
- Ohtake, Akihiro
- Kuroda, Takashi
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Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
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Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
Inas Geburtstag (2001) - Trailer
Molecular beam epitaxy of InAs Quantum Dot and Quantum Dot molecule heterostructures
Molecular Beam Epitaxy of Homogeneous Topological HgTe on Doped InAs Substrate
Epitaxy‐Directed Self‐Assembly of Copolymers and Polymer Blends
Inas Garten
Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Geometries with mismatched branes
Metamorphic Programming
On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface
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