Hochschulschrift
On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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Berlin, Techn. Univ., Diss., 2010
- Classification
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Physik
- Creator
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Grabowski, Jan
- URN
-
urn:nbn:de:kobv:83-opus-28793
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:20 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Grabowski, Jan
Other Objects (12)
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Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs (111) A Nanopillars
Shape and growth of InAs quantum dots on high-index GaAs(113)A, B and GaAs(2 5 11)A, B substrates
Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
Molecular Beam Epitaxy of Homogeneous Topological HgTe on Doped InAs Substrate
Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs (111) A Nanopillars
Shape and growth of InAs quantum dots on high-index GaAs(113)A, B and GaAs(2 5 11)A, B substrates
Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
Molecular Beam Epitaxy of Homogeneous Topological HgTe on Doped InAs Substrate
Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs (111) A Nanopillars
Shape and growth of InAs quantum dots on high-index GaAs(113)A, B and GaAs(2 5 11)A, B substrates
Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates