Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates ; volume:2 ; number:2 ; day:8 ; month:2 ; year:2007 ; pages:112-117 ; date:2.2007
Nanoscale research letters ; 2, Heft 2 (8.2.2007), 112-117, 2.2007
- Urheber
-
Strom, N. W.
Wang, Zh M.
Lee, J. H.
AbuWaar, Z. Y.
Mazur, Yu I.
Salamo, G. J.
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1007/s11671-007-9040-1
- URN
-
urn:nbn:de:101:1-2021081821102799241460
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:47 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Strom, N. W.
- Wang, Zh M.
- Lee, J. H.
- AbuWaar, Z. Y.
- Mazur, Yu I.
- Salamo, G. J.
- SpringerLink (Online service)
Ähnliche Objekte (12)
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
The use of synchrotron radiation to study overgrowth phenomena in InAs, GaAs nanostructures
Site control and potical characterization of InAs quantum dots grown in GaAs nanoholes
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
Epitaxial semiconductor nanostructure growth with templates
Shape and growth of InAs quantum dots on high-index GaAs(113)A, B and GaAs(2 5 11)A, B substrates
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Strukturelle, magnetische und gitterdynamische Grenzflächeneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs (111) A Nanopillars
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
The use of synchrotron radiation to study overgrowth phenomena in InAs, GaAs nanostructures
Site control and potical characterization of InAs quantum dots grown in GaAs nanoholes
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
Epitaxial semiconductor nanostructure growth with templates
Shape and growth of InAs quantum dots on high-index GaAs(113)A, B and GaAs(2 5 11)A, B substrates
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Strukturelle, magnetische und gitterdynamische Grenzflächeneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs (111) A Nanopillars
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
The use of synchrotron radiation to study overgrowth phenomena in InAs, GaAs nanostructures
Site control and potical characterization of InAs quantum dots grown in GaAs nanoholes
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
Epitaxial semiconductor nanostructure growth with templates
Shape and growth of InAs quantum dots on high-index GaAs(113)A, B and GaAs(2 5 11)A, B substrates
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Strukturelle, magnetische und gitterdynamische Grenzflächeneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs (111) A Nanopillars
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs