Hochschulschrift
The use of synchrotron radiation to study overgrowth phenomena in InAs, GaAs nanostructures
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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30 cm
- Extent
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XII, 133 S.
- Language
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Englisch
- Notes
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Ill., graph. Darst.
München, Univ., Diss., 2004 (Nur beschränkt für den Austausch)
- Classification
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Physik
- Keyword
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Indiumarsenid
Galliumarsenid
Nanostruktur
Röntgen-Kleinwinkelstreuung
Synchrotronstrahlung
- Creator
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
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11.06.2025, 2:08 PM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
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Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs (111) A Nanopillars
Strukturelle, magnetische und gitterdynamische Grenzflächeneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
Site control and potical characterization of InAs quantum dots grown in GaAs nanoholes
The use of synchrotron radiation to study overgrowth phenomena in InAs-GaAs nanostructures
Shape and growth of InAs quantum dots on high-index GaAs(113)A, B and GaAs(2 5 11)A, B substrates
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs (111) A Nanopillars
Strukturelle, magnetische und gitterdynamische Grenzflächeneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
Site control and potical characterization of InAs quantum dots grown in GaAs nanoholes
The use of synchrotron radiation to study overgrowth phenomena in InAs-GaAs nanostructures
Shape and growth of InAs quantum dots on high-index GaAs(113)A, B and GaAs(2 5 11)A, B substrates
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs (111) A Nanopillars
Strukturelle, magnetische und gitterdynamische Grenzflächeneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs