Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: CrystEngComm, Band 25, Ausgabe 39, Seite 5541-5547, 2023
- Ereignis
-
Veröffentlichung
- (wo)
-
Berlin
- (wer)
-
Humboldt-Universität zu Berlin
- (wann)
-
2024
- Urheber
-
Aleksandrova, Anna
Golz, Christian
Biermann, Klaus
Trampert, Achim
Semtsiv, Mykhaylo
Weidlich, Helmut
Masselink, William Ted
Takagaki, Yukihiko
- DOI
-
10.18452/28231
- URN
-
urn:nbn:de:kobv:11-110-18452/28878-7
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:34 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Aleksandrova, Anna
- Golz, Christian
- Biermann, Klaus
- Trampert, Achim
- Semtsiv, Mykhaylo
- Weidlich, Helmut
- Masselink, William Ted
- Takagaki, Yukihiko
- Humboldt-Universität zu Berlin
Entstanden
- 2024
Ähnliche Objekte (12)
Molecular beam epitaxy of InAs Quantum Dot and Quantum Dot molecule heterostructures
Molecular Beam Epitaxy of Homogeneous Topological HgTe on Doped InAs Substrate
Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas
Molecular beam epitaxy
Self-catalyzed Growth of InAs Nanowires on InP Substrate
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Über die Technologie der halbleitenden Verbindungen InSb, InAs und InP
On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface
Two‐Dimensional Silicene–Stanene Heterostructures by Epitaxy
Growth and anisotropic transport properties of self assembled InAs nanostructures in InP
Surface roughness in molecular beam epitaxy
Molecular beam epitaxy of InAs Quantum Dot and Quantum Dot molecule heterostructures
Molecular Beam Epitaxy of Homogeneous Topological HgTe on Doped InAs Substrate
Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas
Molecular beam epitaxy
Self-catalyzed Growth of InAs Nanowires on InP Substrate
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Über die Technologie der halbleitenden Verbindungen InSb, InAs und InP
On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface
Two‐Dimensional Silicene–Stanene Heterostructures by Epitaxy
Growth and anisotropic transport properties of self assembled InAs nanostructures in InP
Surface roughness in molecular beam epitaxy
Molecular beam epitaxy of InAs Quantum Dot and Quantum Dot molecule heterostructures
Molecular Beam Epitaxy of Homogeneous Topological HgTe on Doped InAs Substrate
Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas
Molecular beam epitaxy
Self-catalyzed Growth of InAs Nanowires on InP Substrate
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs
Über die Technologie der halbleitenden Verbindungen InSb, InAs und InP
On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface
Two‐Dimensional Silicene–Stanene Heterostructures by Epitaxy
Growth and anisotropic transport properties of self assembled InAs nanostructures in InP