Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
-
Englisch
- Bibliographic citation
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In: CrystEngComm, Band 25, Ausgabe 39, Seite 5541-5547, 2023
- Event
-
Veröffentlichung
- (where)
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Berlin
- (who)
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Humboldt-Universität zu Berlin
- (when)
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2024
- Creator
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Aleksandrova, Anna
Golz, Christian
Biermann, Klaus
Trampert, Achim
Semtsiv, Mykhaylo
Weidlich, Helmut
Masselink, William Ted
Takagaki, Yukihiko
- DOI
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10.18452/28231
- URN
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urn:nbn:de:kobv:11-110-18452/28878-7
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:34 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Aleksandrova, Anna
- Golz, Christian
- Biermann, Klaus
- Trampert, Achim
- Semtsiv, Mykhaylo
- Weidlich, Helmut
- Masselink, William Ted
- Takagaki, Yukihiko
- Humboldt-Universität zu Berlin
Time of origin
- 2024
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On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface
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