Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Materials (2022) 15:3, 1071. https://doi.org/10.3390/ma15031071
- Event
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Veröffentlichung
- (where)
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Würzburg
- (who)
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Universität Würzburg
- (when)
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2023
- Creator
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Wyborski, Paweł
Podemski, Paweł
Wroński, Piotr Andrzej
Jabeen, Fauzia
Höfling, Sven
Sęk, Grzegorz
- DOI
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10.3390/ma15031071
- URN
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urn:nbn:de:bvb:20-opus-297037
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:49 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Wyborski, Paweł
- Podemski, Paweł
- Wroński, Piotr Andrzej
- Jabeen, Fauzia
- Höfling, Sven
- Sęk, Grzegorz
- Universität Würzburg
Time of origin
- 2023
Other Objects (12)
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Steuerbares Interband-Tunneln in MIS-Feldeffektstrukturen auf InAs und InGaAs
Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs
Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns
Thin-film InGaAs metamorphic buffer for telecom C-band quantum dots and optical resonators
Ellipsoidal InAs Quantum Dots
Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure
Thermoelectric characterization of InAs nanowires
Bandkantennahe optische Nichtlinearitäten in InAs
Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
Kapazitätstransientenspektroskopie an Fehlpassungsversetzungen in InGaAs-, GaAs-Halbleiterschichtstrukturen
Josephson-Feldeffekttransistoren auf p-Typ InAs
Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
Steuerbares Interband-Tunneln in MIS-Feldeffektstrukturen auf InAs und InGaAs
Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs
Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns
Thin-film InGaAs metamorphic buffer for telecom C-band quantum dots and optical resonators
Ellipsoidal InAs Quantum Dots
Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure
Thermoelectric characterization of InAs nanowires
Bandkantennahe optische Nichtlinearitäten in InAs
Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
Kapazitätstransientenspektroskopie an Fehlpassungsversetzungen in InGaAs-, GaAs-Halbleiterschichtstrukturen
Josephson-Feldeffekttransistoren auf p-Typ InAs
Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
Steuerbares Interband-Tunneln in MIS-Feldeffektstrukturen auf InAs und InGaAs
Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs
Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns
Thin-film InGaAs metamorphic buffer for telecom C-band quantum dots and optical resonators
Ellipsoidal InAs Quantum Dots
Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure
Thermoelectric characterization of InAs nanowires
Bandkantennahe optische Nichtlinearitäten in InAs
Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
Kapazitätstransientenspektroskopie an Fehlpassungsversetzungen in InGaAs-, GaAs-Halbleiterschichtstrukturen