Coulomb drag transistor using a graphene and MoS2 heterostructure

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2399-3650

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Coulomb drag transistor using a graphene and MoS2 heterostructure ; volume:3 ; number:1 ; day:27 ; month:10 ; year:2020 ; pages:1-8 ; date:12.2020
Communications Physics ; 3, Heft 1 (27.10.2020), 1-8, 12.2020

Creator: Jin, Youngjo
Joo, Min-Kyu
Moon, Byoung Hee
Kim, Hyun
Lee, Sanghyup
Jeong, Hye Yun
Lee, Young Hee

Contributor: SpringerLink (Online service)

DOI: 10.1038/s42005-020-00461-8

URN: urn:nbn:de:101:1-2020120621283879893685

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:33 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

Jin, Youngjo
Joo, Min-Kyu
Moon, Byoung Hee
Kim, Hyun
Lee, Sanghyup
Jeong, Hye Yun
Lee, Young Hee
SpringerLink (Online service)

Other Objects (12)

MoS2 /graphene Lateral Heterostructure Field Effect Transistors

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Theory of Coulomb drag in spatially inhomogeneous 2D materials

Hochschulschrift

Collective excitations and Coulomb drag in two-dimensional semiconductor systems

Coulomb drag induced non-local resistance in double graphene layers

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Optoelectronic synapse using monolayer MoS2 field effect transistors

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Selective Damping of Plasmons in Coupled Two-Dimensional Systems by Coulomb Drag

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

MoS2 /graphene Lateral Heterostructure Field Effect Transistors

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Theory of Coulomb drag in spatially inhomogeneous 2D materials

Hochschulschrift

Collective excitations and Coulomb drag in two-dimensional semiconductor systems

Coulomb drag induced non-local resistance in double graphene layers

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Optoelectronic synapse using monolayer MoS2 field effect transistors

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Selective Damping of Plasmons in Coupled Two-Dimensional Systems by Coulomb Drag

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

MoS2 /graphene Lateral Heterostructure Field Effect Transistors

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Theory of Coulomb drag in spatially inhomogeneous 2D materials

Hochschulschrift

Collective excitations and Coulomb drag in two-dimensional semiconductor systems

Coulomb drag induced non-local resistance in double graphene layers

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Optoelectronic synapse using monolayer MoS2 field effect transistors

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Selective Damping of Plasmons in Coupled Two-Dimensional Systems by Coulomb Drag

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Coulomb drag transistor using a graphene and MoS2 heterostructure

Object Details

References and Relationships

Contributors, Places and Time

Further information

Data provider

Associated

Other Objects (12)

MoS2 /graphene Lateral Heterostructure Field Effect Transistors

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Theory of Coulomb drag in spatially inhomogeneous 2D materials

Collective excitations and Coulomb drag in two-dimensional semiconductor systems

Coulomb drag induced non-local resistance in double graphene layers

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Optoelectronic synapse using monolayer MoS2 field effect transistors

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Selective Damping of Plasmons in Coupled Two-Dimensional Systems by Coulomb Drag

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

MoS2 /graphene Lateral Heterostructure Field Effect Transistors

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Theory of Coulomb drag in spatially inhomogeneous 2D materials

Collective excitations and Coulomb drag in two-dimensional semiconductor systems

Coulomb drag induced non-local resistance in double graphene layers

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Optoelectronic synapse using monolayer MoS2 field effect transistors

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Selective Damping of Plasmons in Coupled Two-Dimensional Systems by Coulomb Drag

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

MoS2 /graphene Lateral Heterostructure Field Effect Transistors

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Theory of Coulomb drag in spatially inhomogeneous 2D materials

Collective excitations and Coulomb drag in two-dimensional semiconductor systems

Coulomb drag induced non-local resistance in double graphene layers

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Optoelectronic synapse using monolayer MoS2 field effect transistors

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Selective Damping of Plasmons in Coupled Two-Dimensional Systems by Coulomb Drag

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

Related objects

Reset password