Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2397-7132

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Giant persistent photoconductivity in monolayer MoS2 field-effect transistors ; volume:5 ; number:1 ; day:11 ; month:1 ; year:2021 ; pages:1-8 ; date:12.2021
npj 2D materials and applications ; 5, Heft 1 (11.1.2021), 1-8, 12.2021

Creator: George, Antony
Fistul, M. V.
Grünewald, Marco
Kaiser, D.
Lehnert, T.
Mupparapu, R.
Neumann, C.
Hübner, U.
Schaal, Maximilian
Masurkar, N.
Arava, L. M. R.
Staude, I.
Kaiser, Ute
Fritz, Torsten
Turchanin, A.

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41699-020-00182-0

URN: urn:nbn:de:101:1-2021020610042784429385

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:22 AM CEST

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Associated

George, Antony
Fistul, M. V.
Grünewald, Marco
Kaiser, D.
Lehnert, T.
Mupparapu, R.
Neumann, C.
Hübner, U.
Schaal, Maximilian
Masurkar, N.
Arava, L. M. R.
Staude, I.
Kaiser, Ute
Fritz, Torsten
Turchanin, A.
SpringerLink (Online service)

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Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

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Other Objects (12)

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