Optical Spin-Photon Interfaces with a Focus on Transition Metal Defects in Silicon Carbide
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Konstanz, Universität Konstanz, Dissertation, 2024
- Keyword
-
Siliciumcarbid
Qubit
Quanteninformatik
Grenzfläche
Übergangsmetall
Gitterbaufehler
- Event
-
Veröffentlichung
- (where)
-
Konstanz
- (who)
-
KOPS Universität Konstanz
- (when)
-
2023
- Creator
-
Tissot, Benedikt
- URN
-
urn:nbn:de:bsz:352-2-1a9xtq5b441w79
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:45 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Tissot, Benedikt
- KOPS Universität Konstanz
Time of origin
- 2023
Other Objects (12)
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Silicon carbide, Vol. 1.. Growth, defects, and novel applications
Superradiance of spin defects in silicon carbide for maser applications
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Engineering and control of defects in silicon carbide for quantum technologies
Silicon carbide, Vol. 1.
Silicon carbide, Vol. 2.
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Silicon carbide, Vol. 1.. Growth, defects, and novel applications
Superradiance of spin defects in silicon carbide for maser applications
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Engineering and control of defects in silicon carbide for quantum technologies
Silicon carbide, Vol. 1.
Silicon carbide, Vol. 2.
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Silicon carbide, Vol. 1.. Growth, defects, and novel applications
Superradiance of spin defects in silicon carbide for maser applications
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Engineering and control of defects in silicon carbide for quantum technologies
Silicon carbide, Vol. 1.