Cryogenic in-memory computing for quantum processors using commercial 5-nm FinFETs

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: IEEE open journal of circuits and systems 4 (2023), S. 258-270

Event: Veröffentlichung

(where): Stuttgart

(who): Universitätsbibliothek der Universität Stuttgart

(when): 2023

Creator: Parihar, Shivendra Singh
Thomann, Simon
Pahwa, Girish
Chauhan, Yogesh Singh
Amrouch, Hussam

DOI: 10.18419/opus-14718

URN: urn:nbn:de:bsz:93-opus-ds-147375

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:54 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

Parihar, Shivendra Singh
Thomann, Simon
Pahwa, Girish
Chauhan, Yogesh Singh
Amrouch, Hussam
Universitätsbibliothek der Universität Stuttgart

Time of origin

2023

Other Objects (12)

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Hochschulschrift

Oxidische FETs mit sub-100 nm Gatelänge

Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

Graffiti | Streetart

FETS GND

Computing with Ferroelectric FETs

Programmable Quantum Processors

Planar microfluidic processors

Hochschulschrift

Untersuchung des elektronischen Transports an 28 nm MOSFETs und an Schottky-Barrieren FETs aus Silizium-Nanodrähten

Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance

Solid immersion microscopy images cells under cryogenic conditions with 12 nm resolution

In-Memory Interval Joins

In-memory mechanical computing

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Hochschulschrift

Oxidische FETs mit sub-100 nm Gatelänge

Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

Graffiti | Streetart

FETS GND

Computing with Ferroelectric FETs

Programmable Quantum Processors

Planar microfluidic processors

Hochschulschrift

Untersuchung des elektronischen Transports an 28 nm MOSFETs und an Schottky-Barrieren FETs aus Silizium-Nanodrähten

Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance

Solid immersion microscopy images cells under cryogenic conditions with 12 nm resolution

In-Memory Interval Joins

In-memory mechanical computing

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Hochschulschrift

Oxidische FETs mit sub-100 nm Gatelänge

Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

Graffiti | Streetart

FETS GND

Computing with Ferroelectric FETs

Programmable Quantum Processors

Planar microfluidic processors

Hochschulschrift

Untersuchung des elektronischen Transports an 28 nm MOSFETs und an Schottky-Barrieren FETs aus Silizium-Nanodrähten

Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance

Solid immersion microscopy images cells under cryogenic conditions with 12 nm resolution

In-Memory Interval Joins

In-memory mechanical computing

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Cryogenic in-memory computing for quantum processors using commercial 5-nm FinFETs

Object Details

References and Relationships

Contributors, Places and Time

Further information

Data provider

Associated

Time of origin

Other Objects (12)

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Oxidische FETs mit sub-100 nm Gatelänge

Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

FETS GND

Computing with Ferroelectric FETs

Programmable Quantum Processors

Planar microfluidic processors

Untersuchung des elektronischen Transports an 28 nm MOSFETs und an Schottky-Barrieren FETs aus Silizium-Nanodrähten

Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance

Solid immersion microscopy images cells under cryogenic conditions with 12 nm resolution

In-Memory Interval Joins

In-memory mechanical computing

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Oxidische FETs mit sub-100 nm Gatelänge

Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

FETS GND

Computing with Ferroelectric FETs

Programmable Quantum Processors

Planar microfluidic processors

Untersuchung des elektronischen Transports an 28 nm MOSFETs und an Schottky-Barrieren FETs aus Silizium-Nanodrähten

Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance

Solid immersion microscopy images cells under cryogenic conditions with 12 nm resolution

In-Memory Interval Joins

In-memory mechanical computing

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Oxidische FETs mit sub-100 nm Gatelänge

Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

FETS GND

Computing with Ferroelectric FETs

Programmable Quantum Processors

Planar microfluidic processors

Untersuchung des elektronischen Transports an 28 nm MOSFETs und an Schottky-Barrieren FETs aus Silizium-Nanodrähten

Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance

Solid immersion microscopy images cells under cryogenic conditions with 12 nm resolution

In-Memory Interval Joins

In-memory mechanical computing

Related objects

Reset password