Metalorganic Vapor‐Phase Epitaxy of + c/− c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Metalorganic Vapor‐Phase Epitaxy of + c/− c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device ; day:09 ; month:09 ; year:2024 ; extent:9
Physica status solidi / B. B, Basic solid state physics ; (09.09.2024) (gesamt 9)
- Creator
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Ikeda, Kazuhisa
Malik, Shahzeb
Uemukai, Masahiro
Tanikawa, Tomoyuki
Katayama, Ryuji
- DOI
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10.1002/pssb.202400161
- URN
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urn:nbn:de:101:1-2409101413035.241611711689
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:36 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Ikeda, Kazuhisa
- Malik, Shahzeb
- Uemukai, Masahiro
- Tanikawa, Tomoyuki
- Katayama, Ryuji
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Efficient numerical simulation of the liquid phase epitaxy
Berry phase transition in twisted bilayer graphene
Exploiting Phase Transitions in Polymer Bilayer Actuators
Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
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Pseudo halide vapor phase epitaxy growth of GaN crystals
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Efficient numerical simulation of the liquid phase epitaxy
Berry phase transition in twisted bilayer graphene
Exploiting Phase Transitions in Polymer Bilayer Actuators
Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
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