Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: Journal of Applied Physics ; 113 (2013), 21. - 214504. - ISSN 0021-8979. - eISSN 1089-7550
- Klassifikation
-
Physik
- Ereignis
-
Veröffentlichung
- (wo)
-
Konstanz
- (wer)
-
Bibliothek der Universität Konstanz
- (wann)
-
2013
- Urheber
-
Fenning, David P.
Zuschlag, Annika
Bertoni, Mariana
Lai, Barry
Hahn, Giso
Buonassisi, Tonio
- URN
-
urn:nbn:de:bsz:352-250307
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:51 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Fenning, David P.
- Zuschlag, Annika
- Bertoni, Mariana
- Lai, Barry
- Hahn, Giso
- Buonassisi, Tonio
- Bibliothek der Universität Konstanz
Entstanden
- 2013
Ähnliche Objekte (12)
On the origin and formation of large defect clusters in multicrystalline silicon solar cells
3D-FIB Investigation of Cu Precipitates in c-Si after High Temperature Treatments
Etch Pit Density Reduction in POCl<sub>3</sub> and APCVD Gettered mc‐Si
Spatially resolved degradation and regeneration kinetics in mc-Si
Degradation und Regeneration Analysis in mc-Si
Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced model
Transition metal precipitates in mc Si : a new detection method using 3D-FIB
The origin of background plating
Efficacy of Phosphorus Gettering and Hydrogenation in Multicrystalline Silicon
Efficiencies above 16% on Novel Quasi-mono RGS Material
Defect characterization and investigation of RST-silicon ribbon wafers
Al2O3/SiN x -stacks at increased temperatures : avoiding blistering during contact firing
On the origin and formation of large defect clusters in multicrystalline silicon solar cells
3D-FIB Investigation of Cu Precipitates in c-Si after High Temperature Treatments
Etch Pit Density Reduction in POCl<sub>3</sub> and APCVD Gettered mc‐Si
Spatially resolved degradation and regeneration kinetics in mc-Si
Degradation und Regeneration Analysis in mc-Si
Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced model
Transition metal precipitates in mc Si : a new detection method using 3D-FIB
The origin of background plating
Efficacy of Phosphorus Gettering and Hydrogenation in Multicrystalline Silicon
Efficiencies above 16% on Novel Quasi-mono RGS Material
Defect characterization and investigation of RST-silicon ribbon wafers
Al2O3/SiN x -stacks at increased temperatures : avoiding blistering during contact firing
On the origin and formation of large defect clusters in multicrystalline silicon solar cells
3D-FIB Investigation of Cu Precipitates in c-Si after High Temperature Treatments
Etch Pit Density Reduction in POCl<sub>3</sub> and APCVD Gettered mc‐Si
Spatially resolved degradation and regeneration kinetics in mc-Si
Degradation und Regeneration Analysis in mc-Si
Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced model
Transition metal precipitates in mc Si : a new detection method using 3D-FIB
The origin of background plating
Efficacy of Phosphorus Gettering and Hydrogenation in Multicrystalline Silicon
Efficiencies above 16% on Novel Quasi-mono RGS Material
Defect characterization and investigation of RST-silicon ribbon wafers