Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced model
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: Journal of Applied Physics ; 108 (2010), 3. - 34516. - ISSN 0021-8979. - eISSN 1089-7550
- Klassifikation
-
Physik
- Ereignis
-
Veröffentlichung
- (wo)
-
Konstanz
- (wer)
-
Bibliothek der Universität Konstanz
- (wann)
-
2011
- Beteiligte Personen und Organisationen
- URN
-
urn:nbn:de:bsz:352-opus-131675
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:56 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Micard, Gabriel
- Hahn, Giso
- Zuschlag, Annika
- Seren, Sven
- Terheiden, Barbara
- Bibliothek der Universität Konstanz
Entstanden
- 2011
Ähnliche Objekte (12)
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
Multifunctional ICP-PECVD Silicon Nitride Layers for High-efficiency Silicon Solar Cell Applications
Passivation of Si wafers by Al2O3 films with different surface conditioning
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Investigation of radiation damage to the Al2O3
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Design considerations for industrial rear passivated solar cells
Void formation on PERC solar cells and their impact on the electrical cell parameters verified by luminescence and scanning acoustic microscope measurements
Influence of deposition parameters on elemental concentrations, electrical, and optical properties of magnetron co-sputtered Al-doped ZnO films
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters
Comparison of bifacial and monofacial large-area n-type Si solar cells from 100 μm thin wire-sawn wafers
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
Multifunctional ICP-PECVD Silicon Nitride Layers for High-efficiency Silicon Solar Cell Applications
Passivation of Si wafers by Al2O3 films with different surface conditioning
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Investigation of radiation damage to the Al2O3
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Design considerations for industrial rear passivated solar cells
Void formation on PERC solar cells and their impact on the electrical cell parameters verified by luminescence and scanning acoustic microscope measurements
Influence of deposition parameters on elemental concentrations, electrical, and optical properties of magnetron co-sputtered Al-doped ZnO films
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters
Comparison of bifacial and monofacial large-area n-type Si solar cells from 100 μm thin wire-sawn wafers
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
Multifunctional ICP-PECVD Silicon Nitride Layers for High-efficiency Silicon Solar Cell Applications
Passivation of Si wafers by Al2O3 films with different surface conditioning
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Investigation of radiation damage to the Al2O3
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Design considerations for industrial rear passivated solar cells
Void formation on PERC solar cells and their impact on the electrical cell parameters verified by luminescence and scanning acoustic microscope measurements
Influence of deposition parameters on elemental concentrations, electrical, and optical properties of magnetron co-sputtered Al-doped ZnO films
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters