A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Peters, L.; Margenfeld, C.; Krügener, J.; Ronning, C.; Waag, A.: A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN. In: Physica status solidi : A, Applied research (2022), online first, 2200485. DOI: https://doi.org/10.1002/pssa.202200485
- Event
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Veröffentlichung
- (where)
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Hannover
- (who)
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Gottfried Wilhelm Leibniz Universität Hannover
- (when)
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2022
- Event
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Veröffentlichung
- (where)
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Hannover
- (who)
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Technische Informationsbibliothek (TIB)
- (when)
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2022
- Creator
- DOI
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10.15488/13681
- URN
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urn:nbn:de:101:1-2023052502151100502081
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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25.03.2025, 1:55 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Peters, Lukas
- Margenfeld, Christoph
- Krügener, Jan
- Ronning, Carsten
- Waag, Andreas
- Gottfried Wilhelm Leibniz Universität Hannover
- Technische Informationsbibliothek (TIB)
Time of origin
- 2022
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