A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Peters, L.; Margenfeld, C.; Krügener, J.; Ronning, C.; Waag, A.: A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN. In: Physica status solidi : A, Applied research (2022), online first, 2200485. DOI: https://doi.org/10.1002/pssa.202200485
- Ereignis
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Veröffentlichung
- (wo)
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Hannover
- (wer)
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Gottfried Wilhelm Leibniz Universität Hannover
- (wann)
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2022
- Ereignis
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Veröffentlichung
- (wo)
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Hannover
- (wer)
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Technische Informationsbibliothek (TIB)
- (wann)
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2022
- Urheber
- DOI
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10.15488/13681
- URN
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urn:nbn:de:101:1-2023052502151100502081
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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25.03.2025, 13:55 MEZ
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Beteiligte
- Peters, Lukas
- Margenfeld, Christoph
- Krügener, Jan
- Ronning, Carsten
- Waag, Andreas
- Gottfried Wilhelm Leibniz Universität Hannover
- Technische Informationsbibliothek (TIB)
Entstanden
- 2022
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